Semiconducting TiO2 displays non-volatile multi-state, hysteretic behavior in its I-V characteristics that can be exploited as a memory material in a memristive device. We exposed memristive TiO2 devices in the on and off resistance states to 45 Mrad(Si) of approximately 1-MeV gamma radiation and 23 Mrad(Si) of 941-MeV Bi-ions under zero bias conditions and none of the devices were degraded. These results suggest that TiO2 memristive devices are good candidates for radiation hard electronics for aerospace.
Radiation Hardness of TiO2 Memristive Junctions
IEEE Transactions on Nuclear Science ; 57 , 3 ; 1640-1643
2010
4 Seiten, 20 Quellen
Article (Journal)
English
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