Advanced device design techniques have been recently introduced in the automotive power electronics field as an answer to the demand of even more reliable devices. A key role in these techniques is played by the reliability assessment, a procedure that estimates the expected lifetime of devices under development according to the assigned mission profile. In this paper the reliability assessment of a planar StripFET structure with reference to a typical brake pump application is accomplished. Key aspects of the procedure described in the paper are: an accurate Failure Mode cause and Effect Analysis (FMEA) and an experimental dynamic analysis of the temperature distribution over the metal source surface. The first is oriented to the identification of the failure mechanism, the last to correlate electric working conditions with the thermo mechanical stress. Although the proposed paper is focused to devices designed to drive brake pumps, the proposed approach can be easily applied also to Power MOS solid state switches equipping other automotive systems such as: electromagnetic valve control, direct high-pressure injection and active suspensions systems.


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    Title :

    FMEA and lifetime estimation of power MOSFETs for brake systems


    Additional title:

    Fehlerursache/-einflußverhalten und Lebensdauerabschätzung von Leistungs-MOSFETs für Bremssysteme


    Contributors:
    Testa, A. (author) / Caro, S. de (author) / Panarello, S. (author) / Patane, S. (author) / Letor, R. (author) / Russo, S. (author) / Poma, S. (author) / Patti, D. (author)


    Publication date :

    2009


    Size :

    8 Seiten, 10 Bilder, 7 Tabellen, 5 Quellen


    Type of media :

    Conference paper


    Type of material :

    Storage medium


    Language :

    English