This paper reports on the investigation of the electronic properties of a thin film CdS/CdTe solar cell with the ion beam induced charge (IBIC) technique. The device under test is a thin film (total thickness around 10 microns) multilayer heterojunction solar cell, displaying an efficiency of 14% under AM1.5 illumination conditions. The IBIC measurements were carried out using focused 3.150 MeV He ions raster scanned onto the surface of the back electrode. The charge collection efficiency (CCE) maps show inhomogeneous response of the cell to be attributed to the polycrystalline nature of the CdTe bulk material. Finally, the evolution of the IBIC signal versus the ion fluence was studied in order to evaluate the radiation hardness of the CdS/CdTe solar cells in a view of their use in solar modules for space applications.
IBIC analysis of CdTe/CdS solar cells
IBIC-Analyse von CdTe/CdT-Solarzellen
2009
4 Seiten, 9 Quellen
Article (Journal)
English
Cadmiumsulfid , Sonnenzelle , Dünnschichttechnik , Schichtdicke , Photoelement , Dünnschichtbauelement , Cadmiumtellurid , Strahlungsfestigkeit , Ionenstrahlmikrosonde , Heteroübergang , Mehrfachschicht , polykristalliner Stoff , Raumfahrttechnik , Strahlungsdosis , elektronische Eigenschaft , Quantenausbeute
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