Phase and amplitude controlling ICs realized in a low cost standard silicon process are demonstrated. The design of several ICs at S-, C- and X-band has shown that silicon germanium is a strong contender to gallium arsenide where lowest noise figure is not vital. This applies also to the T/R-modules suited for military AESA-radars. The circuits presented in this paper are manufactured by austriamicrosystems in their 0.35 micrometer SiGe-BiCMOS process with an fT of 70 GHz.


    Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Silicon-germanium for phased array radars


    Contributors:
    Berg, H. (author) / Thiesies, H. (author) / Hemmendorff, E. (author) / Sidiropoulos, G. (author) / Hedman, J. (author)


    Publication date :

    2008


    Size :

    4 Seiten, 5 Quellen




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Adaptive Beamforming for Phased Array Radars

    Nickel, U. | Online Contents | 1998


    CONTINUOUSLY STEERING PHASED ARRAY AND HEADLIGHT RADARS

    SHAMS SOREN | European Patent Office | 2022

    Free access

    Active phased-array radars for airborne air defence

    Watkins, C.D. | Tema Archive | 1990


    An interlaced phased array antenna for atmospheric radars

    Janardhanan, K. V. | Online Contents | 2001