The influence of 8 MeV electrons on the threshold voltage (V TH), transconductance (g m) and mobility (my) of n-channel depletion metal-oxide semiconductor field-effect transistors (MOSFETs) irradiated at gate bias, VGS = +2, 0 and -2 V, has been studied in the dose range of 0.5 - 31 kGy. The measurements performed after irradiation showed considerable decrease in VTH, gm and my . The densities of interface trapped charge (Delta Nit) and oxide trapped charge (Delta N ot) for irradiated devices have been estimated from the subthreshold measurements. It has been found that Delta N ot is higher than Delta Nit. The mobility of carriers (my) in the n-channel was estimated from the peak transconductance (g mPeak ) and it was found that my decreased by around 68.5 - 73.5% after exposure to the total dose of 31 kGy. Mobility degradation coefficients due to interface traps (alpha it ) and oxide trapped charge (alpha ( ind ot) ) were estimated and it was found that the mobility degradation was mainly due to Delta N it and the effect of Delta N ot was negligible.
High-energy radiation effects on subthreshold characteristics, transconductance and mobility of n-channel MOSFETs
Hochenergie-Strahlungseffekte auf Sub-Schwellenspannungscharakteristik, Kennliniensteilheit und Beweglickeit von n-Kanal MOSFETs
Semiconductor Science and Technology ; 18 , 12 ; 1037-1042
2003
6 Seiten, 9 Bilder, 2 Tabellen, 26 Quellen
Article (Journal)
English
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