This paper demonstrates that the on-resistance of a power MOSFET decreases significantly when the operating temperature decreases. The decrease in on-resistance under cryogenic temperature allows the device to operate at a much higher power and current condition. Also, it is demonstrated that the MOSFET device can be effectively kept at cryogenic temperature by spray cooling with liquid nitrogen. Over 80 W of heat generated can be removed continuously with spray cooling.


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    Title :

    Performance Characteristics of MOSFETs Operating at High Power


    Additional title:

    Sae Technical Papers


    Contributors:
    Sundaram, K. B. (author) / Chow, L. C. (author) / Lin, Y. R. (author)

    Conference:

    Power Systems Conference ; 2000



    Publication date :

    2000-10-31




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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