An analysis of the effect of proton irradiation on Culn(Ga)Se2 (CIGS) solar cells in terms of displacement damage dose (Dd) is presented. Proton radiation data from CIGS cells grown both on glass and on flexible metal foils are included. The cells grown on flexible substrates displayed starting efficiencies as high as 12 % (1 sun, AMO), comparable to that of the cells on glass. All of the proton radiation data, including data from the literature, are shown to correlate in terms of Dd, and a characteristic proton degradation curve is calculated. Electron irradiation data are also presented and correlated in terms of Dd, enabling a characteristic electron degradation curve to be calculated. The results show the CIGS devices to display an enhanced resistance to electron over proton irradiation. Possible physical mechanisms responsible for this behavior are discussed.
Displacement damage dose analysis of proton irradiated CIGS solar cells on flexible substrates
Analyse der Umlagerungsschädigungsdosis von CIGS-Solarzellen auf flexiblen Substraten bei Protonenbeschuss
2001
4 Seiten, 7 Bilder, 3 Tabellen, 17 Quellen
Conference paper
English
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