The performance of 250, 300 and 250 nm fully-depleted SOI transistors is characterized at low temperatures (between 77 and 300 deg K) and after proton irradiation. Device parameters such as drain current, mobility, threshold voltage, subthreshold slope, and early voltage are analyzed. The suitability of sub-micron FD-SOI devices is examined for harsh environments as encountered in deep space exploration missions. The results indicate significant performance improvements in mobility, subthreshold slope, and drain current with decreasing temperature down to 100 deg K. The increase in threshold voltage dominates below this temperature, leading to a decrease in saturation current between 100 and 77 deg K. Radiation experiments show the transistors did not survive above 150 Krad (Si), most likely due to the single event gate rupture effect. Mobility and subthreshold slope are observed to degrade with total dose. Threshold voltage improves up to 75 Krad (Si) and degrades beyond this level.
Evaluation of the sensitivity of newly emerging FD-SOI technology to the low temperature and radiation environment in space
2000
6 Seiten, 8 Bilder, 3 Tabellen, 8 Quellen
Conference paper
English
British Library Conference Proceedings | 2000
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