Within the scope of studies conducted at the Warsaw Technical University to find new, simple and cheap transducers with a strong output signal and measuring properties comparable with those of the transducers used hitherto, investigations have been started on the possibility of using for this purpose Si, GaAs and GaSb semiconductor p-n junctions. Presented paper reports the results of studies on the application of silicon, gallium arsenide and gallium antimonide p-n junctions as transducers of rapidly varying pressures up to 100 MPa in fuel pumps of Diesel engines. The dynamic error of the transducers based on Si and GaAs junctions was found to be 1.5 %.


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    Title :

    Semiconductor transducers for measurement of rapidly varying pressures in automotive industry


    Additional title:

    Halbleiterwandler fuer die Messung von sich schnell aendernden Druecken in der Automobilindustrie


    Contributors:


    Publication date :

    1984


    Size :

    5 Seiten, 8 Bilder, 3 Quellen


    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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