A number of military applications require the operation of optoelectronic data links in ionizing environments. The purpose of this paper is to extend the analysis to treat the digital signal response of single-pass and multipass Si and other PIN photodiode structures. For example, at dose rate of 10(exp6) rads/sec and a bandwidth of 7.5 MHz, values for p0 of 4.7x10(exp-7) to 1.8x10(exp-6) W are expected for realistic optimized photodiodes. In addition, the use of high optical absorption coefficient materials or multipass detector designs show two important improvements over single-pass Si photodiodes. Responding to a change from zero to 10(exp7) rads/sec, the required input optical signal P0 increases only one to five times compared to single-pass Si photodiodes which require P0 increases of 10 to 100 times. Experiments are in progress to support the theoretical modelling.
Optimizing photodetectors for digital communication in radiation environments
Optimierung von Photodetektoren fuer digitale Kommunikation in Strahlenumgebung
IEEE Transactions on Nuclear Science ; 25 , 6/Dez. ; 1545-1549
1978
5 Seiten, 8 Bilder, 1 Tabelle, 6 Quellen
Article (Journal)
English
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