To study the electric conduction in polycrystalline thin films a structural model is developed. The potential barriers are assumed to be as large as possible. The barrier consists of the grain boundary region and two adjacent microcrystallite layers which are the result of several mechanisms. It is shown that in polycrystalline films the electrical properties e.g. current density, mobility, resistivity, are exponential functions of the longitudinal electric field. The conclusion is that, if the electrical properties of these films are studied, the quantitative dependence of these properties upon the electric field used in measurements must be known.
Barrier scattering in polycrystalline thin films of semiconductors
Barrierenstreuung in duennen polykristallinen Halbleiterschichten
Solid State Electronics ; 19 , 10 ; 894-896
1976
3 Seiten, 3 Bilder, 8 Quellen
Article (Journal)
English
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