Abstract The time-resolved fluorescence spectrum of wide-gap semiconductors, single crystals of zinc oxide and gallium nitride, excited by nickel-like silver x-ray laser with the wavelength of 13.9 nm were observed. The streak image of fluorescence at around 380 nm and 370 nm for each samples were obtained by one-shot excitation of the x-ray laser. The fluorescence lifetimes were compared with the 351 nm excitation cases and evaluated the samples for scintillation materials of EUV lithography.


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    Title :

    Time-Resolved Fluorescence Spectrum of Wide-Gap Semiconductors Excited by 13.9 nm X-Ray Laser


    Contributors:
    Tanaka, M. (author) / Furukawa, Y. (author) / Nakazato, T. (author) / Tatsumi, T. (author) / Murakami, H. (author) / Shimizu, T. (author) / Sarukura, N. (author) / Nishikino, M. (author) / Kawachi, T. (author) / Kagamitani, Y. (author)

    Published in:

    X-Ray Lasers 2008 ; 7 ; 501-505


    Publication date :

    2009-01-01


    Size :

    5 pages





    Type of media :

    Article/Chapter (Book)


    Type of material :

    Electronic Resource


    Language :

    English




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