The optoelectronic calculations of thin film CuGa0.89B0.11Se2 is made by using first principle investigations that is rooted in the framework of density functional theory and complied with Wien2k code. The complete work is done by using full potential linearized augmented plane wave method. The value of direct band gap is 0.75 eV which is evaluated by exploring the density of state structure and band structure for achieving the electronic properties of the compound that are numerated by Tran-Blaha modified Becke Johnson exchange correlation potential. This exchange correlation functional is also used to find out the optical response of thin film CuGa0.89B0.11Se2.The optical properties are examined through the complex dielectric tensor spectra, spectra of absorption coefficient, reflection and refraction spectra. The integrated absorption coefficient calculated through the absorption spectra is 107.23 (×104 eV/cm) and the percentage of reflectivity at its absolute value is 20%. The notable intensity is observed between 3 and 5 eV which affirms its utility in optoelectronic applications.
A Probing Study on the Optoelectronic Properties of Flexible-Thin Film CuGa0.89B0.11Se2—A DFT Approach
Lect. Notes Electrical Eng.
2022-10-05
9 pages
Article/Chapter (Book)
Electronic Resource
English
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