This paper presents a TCAD simulation-based study of the radiation effects on an ultra-thin symmetric double gate (SDG) junctionless field effect nanowire transistor (JLFENT). A 3-D model of the nanowire transistor is virtually fabricated by considering the similar parameters as used in actual fabrication by using GENIUS 3-D Visual TCAD software. The JLFENT is exposed to various high irradiative environment from 100 to 500 krad and the effect on the device characteristics like drain current were studied. For comparison we have used different oxide materials namely SiO2, and high-k dielectric Si3N4 and HfO2 were used. The effect with varying the width of the devices were also studied. Here we found that the use of high-k gate dielectric HfO2 on the device has shown better response when exposed in different environment of ionizing radiation.


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    Title :

    A TCAD Simulation-Based Study of the Radiation Effects on Ultra-Thin Symmetric Double Gate (SDG) Junctionless Field Effect Nanowire Transistor (JLFENT)


    Additional title:

    Lect. Notes Electrical Eng.


    Contributors:
    Dwivedi, Sanjeet (editor) / Singh, Sanjeev (editor) / Tiwari, Manish (editor) / Shrivastava, Ashish (editor) / Deka, N. (author) / Duari, C. (author) / Bora, N. (author)


    Publication date :

    2022-10-05


    Size :

    11 pages





    Type of media :

    Article/Chapter (Book)


    Type of material :

    Electronic Resource


    Language :

    English





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