Abstract Radiation effects of protons and electrons on the backfield silicon solar cells were investigated. The samples without cover glass were irradiated by the protons and electrons with 30–180 keV and a given flux of 1.2 × 1012 cm-2 · s-1 for various fluences at 77 K. Experimental results show that the short circuit current decreases gradually with increasing the proton fluence, while the open circuit voltage degrades severely under lower fluences. No obvious changes appear in the electric properties before and after the irradiation by electrons, and there exists a recovery effect in the in situ measurement for the irradiated samples. The effect of the combined radiation of protons and electrons does not showsimple additivity. The damage extent of proton radiation is larger than that of combined radiation under lower electron fluences, while the combined radiation results in more severe damage under higher fluences. The DLTS analysis verified that the primary defects induced by protons were the H1 or [V+B] type at the energy level of +0.45 eV, which would result in formation of a resistance layer in the base region and degradation of the backfield Si solar cells.


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    Title :

    RADIATION EFFECTS OF PROTONS AND ELECTRONS ON BACKFIELD SILICON SOLAR CELLS


    Contributors:
    HU, ZHENGYU (author) / HE, SHIYU (author) / YANG, DEZHUANG (author)


    Publication date :

    2006-01-01


    Size :

    8 pages





    Type of media :

    Article/Chapter (Book)


    Type of material :

    Electronic Resource


    Language :

    English