We present our efforts on development of high performance low noise, long-wave infrared (LWIR) and multicolor detectors based on the InAs/GaSb strained layer material (SLS) material system. The LWIR SLS detector with PbIbN architecture showed improved performance over the conventional PIN design due to unipolar current blocking layers. At 77K and Vb=-0.25V, a responsivity of 1.8 A/W, dark current density of 1.2 mA/cm2, quantum efficiency of 23% and shot noise limited detectivity (D*) of 8.7×1010 Jones (λc = 10.8 μm) has been observed. Dual band response was registered with 50% cut-off wavelengths of 5μm and 10μm from an SLS detector with the pBp design. The responsivity equal to 1.6 A/W (at λ = 5 μm and Vb = +0.4 V) and 1.8 A/W (at λ = 9 μm and Vb = -0.7 V) for MWIR and LWIR absorbers was achieved with corresponding values of specific detectivity 5 x 1011 Jones and 2.6 x 1010 Jones, respectively. The maximum values of quantum efficiency were estimated to 41% (MWIR) and 25% (LWIR) at Vb = +0.4V and Vb = -0.7V. Moreover, the diffusion-limited behavior of dark current at higher temperatures was observed for the MWIR absorber for pBp detector. Finally, three-color response was registered from three contact device with nBn architecture for SWIR and MWIR and heterojunction PIbN architecture for LWIR detection (NbNbiP). At 77K, the cut-off wavelength for SWIR, MWIR and LWIR regions have been observed as 3.0 μm, 4.7 μm, and 10.1 μm respectively. At the same temperature, D* of 1.4 × 1010 Jones, 1.8 × 1010 Jones and 1.5 × 109 Jones for SWIR, MWIR and LWIR signals has been observed.
Performance of long-wave infrared InAs/GaSb strained layer superlattice detectors for the space applications
Nanophotonics and Macrophotonics for Space Environments V ; 2011 ; San Diego,California,United States
Proc. SPIE ; 8164
2011-09-01
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2011
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British Library Conference Proceedings | 1995
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