Infrared detector arrays operating in space must be able to withstand defect-inducing proton radiation without performance degradation. Therefore, it is imperative that the proton-radiation hardness of infrared detector materials be investigated. Photoluminescence (PL) is sensitive to defects in materials, and thus can be used to quantify the effects of proton-radiation-induced defects. The excitation intensity-dependent PL was used to examine of a set of InAs/InAsSb superlattices before and after 63-MeV-proton irradiation. A proton dose of 100 kRad(Si) was applied to a different piece of each superlattice sample. The low-temperature excitation intensity dependent PL results reveal minimal increases in the carrier concentration, non-radiative recombination, and the PL full-width half-maximum. These results suggest that InAs/InAsSb superlattices are quite tolerant of proton irradiation and may be suitable for space infrared detector arrays.
Proton radiation effects on the photoluminescence of infrared InAs/InAsSb superlattices
Nanophotonics and Macrophotonics for Space Environments VII ; 2013 ; San Diego,California,United States
Proc. SPIE ; 8876
2013-09-24
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2013
|InAsSb/InSb Strained-Layer Superlattice Infrared Detector Technology
British Library Conference Proceedings | 1995
|Analytical Simulation of an InAsSb Photovoltaic Detector for Mid-Infrared Applications
British Library Online Contents | 2006
|Infrared Detectivities of 11 to 17 m Ideal InAs/In~xGa~1~-~xSb Superlattices
British Library Conference Proceedings | 1995
|Advances in InAsSb-Based Mid-Infrared Lasers and LEDs, Grown by MOCVD
British Library Conference Proceedings | 1997
|