High speed InP lasers have been developed for 400Gbit/s interconnections. Electro-absorption modulator integrated DFB lasers were demonstrated for 106-Gbit/s PAM4 with 0.9 Vpp from 20 to 85°C. 106-Gbit/s PAM4 eye-openings were obtained using directly modulated DFB lasers from 25 to 80°C.


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    Title :

    Advanced InP laser technologies for 400G and beyond hyperscale interconnections


    Contributors:

    Conference:

    Semiconductor Lasers and Laser Dynamics IX ; 2020 ; Online Only,France


    Published in:

    Proc. SPIE ; 11356


    Publication date :

    2020-04-01





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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