High speed InP lasers have been developed for 400Gbit/s interconnections. Electro-absorption modulator integrated DFB lasers were demonstrated for 106-Gbit/s PAM4 with 0.9 Vpp from 20 to 85°C. 106-Gbit/s PAM4 eye-openings were obtained using directly modulated DFB lasers from 25 to 80°C.
Advanced InP laser technologies for 400G and beyond hyperscale interconnections
Semiconductor Lasers and Laser Dynamics IX ; 2020 ; Online Only,France
Proc. SPIE ; 11356
2020-04-01
Conference paper
Electronic Resource
English
Advanced InP laser technologies for 400G and beyond hyperscale interconnections
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