An FEA (Finite Element Analysis) model was developed based on the physical dimension of the MOSFET device to produce a Zth curve closely matching the experimental Zth curve. This Finite Element Analysis model would then be extrapolated down to the region beyond the capability of the hardware of the Zth measurement system
Zth Thermal Modelling of MOSFET in Sub-Milliseconds Range
Sae Technical Papers
SAE 2004 World Congress & Exhibition ; 2004
2004-03-08
Conference paper
English
Zth Thermal Modelling of MOSFET in Sub-Milliseconds Range
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