Silicon Carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the area of power electronic switching devices [1]. This paper updates the reader on selected SiC power devices (including the MOS Turn-Off Thyristor (MTO™)) for use in rugged, high power, 500°C operation which will result in significant reduction of cooling requirements. Highlights of progress achieved to date includes 1.0 kV GTO's, 1.4 kV MOSFET's, and 1.6 kV pn junction diodes, all achieved with blocking layers of 10 to 12 μm, a small fraction of the blocking layer thickness required in comparable silicon devices. These and other advantages allow SiC to offer significant numerous system-level advantages (for example, More Electric Tank - Fig. 1).


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Silicon Carbide Power Devices for Use in Hybrid-EV


    Additional title:

    Sae Technical Papers



    Conference:

    Aerospace Power Systems Conference ; 1998



    Publication date :

    1998-04-21




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Silicon Carbide Power Devices for Use in Hybrid-EV

    Casady, J. B. / Agarwal, A. K. / Seshadri, S. et al. | British Library Conference Proceedings | 1998


    Switching properties of power devices on silicon carbide and silicon

    Schlangenotto,H. / Niemann,E. / Daimler-Benz,Frankfurt,DE | Automotive engineering | 1991


    An overview of Cree silicon carbide power devices

    Richmond, J. / Ryu, S.-H. / Das, M. et al. | IEEE | 2004


    An Overview of Cree Silicon Carbide Power Devices

    Richmond, J. / Ryu, S.-H. / Das, M. et al. | British Library Conference Proceedings | 2004


    6H-silicon carbide power devices for aerospace applications

    Palmour, J.W. / Edmont, J.A. / Kong, Hua-Shuang et al. | Tema Archive | 1993