We characterize the radiation‐induced damage of InGaP/GaAs/Ge solar cells for various proton irradiation energies and fluences using conventional current‐voltage (I‐V) measurements, external quantum efficiency, and a noncontact time‐resolved photoluminescence (PL) technique. From the I‐V curves, we obtain the conversion efficiency of the entire device. The external quantum efficiency showed that the short‐circuit current is only determined by the top InGaP subcell. To obtain accurate information about the point of maximum power, a new PL technique is introduced. The PL time decays of the InGaP and GaAs subcells are measured to obtain the characteristic decay time constants of carrier separation and recombination. We empirically verify that the time‐resolved PL method can be used to predict the electrical conversion efficiency of the subcells. We find that the limiting subcell at the point of maximum power is different from that for short‐circuit current. Radiation damage in unexpected regions of the device is revealed using this optical method. The subcell conversion efficiencies of proton damaged samples are determined with a new optical method that does not require any electrical contacts. By measuring the excitation power dependence of time‐resolved photoluminescence decays, three unique time constants are obtained. We discuss the physical meanings of the time constants, show how they can be used to determine the subcell conversion efficiencies, and compare the results with electrical measurements.


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    Title :

    Evaluation of subcell power conversion efficiencies of radiation‐damaged triple‐junction solar cells using photoluminescence decays



    Published in:

    Publication date :

    2017




    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English



    Classification :

    BKL:    53.36 Energiedirektumwandler, elektrische Energiespeicher





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