Characteristic degradation curves for proton and electron induced degradation of triple junction (3J) and isotype Ga 0.5 In 0.5 P/GaAs/Ge solar cells were obtained. The displacement damage dose methodology in combination with a varying effective threshold energy for atomic displacement T d , e f f was used to analyze 3G28 and 3G30 3J cell data. The nonionizing energy loss (NIEL) was calculated analytically, and T d , e f f was explicitly introduced as a fit parameter. Using the GaAs NIEL in fitting the 3J degradation data, a T d , e f f of 21 eV was determined, whereas a T d , e f f of 36 eV was found using the Ga 0.5 In 0.5 P NIEL. In GaAs and Ga 0.5 In 0.5 P single junction cells, the effective threshold energies for atomic displacement of 22 and 34 eV were determined. Copyright © 2017 John Wiley & Sons, Ltd. We obtained characteristic degradation curves for proton and electron induced degradation of triple junction (3J) and isotype Ga0.5In0.5P/GaAs/Ge solar cells. The displacement damage dose methodology in combination with a varying effective threshold energy for atomic displacement was used. Using the GaAs NIEL in fitting the 3J data, an energy of 21 eV was determined, whereas an energy of 36 eV was found using the Ga0.5In0.5P NIEL. In isotype cells, effective threshold energies of 22 and 34 eV were determined.
Degradation fitting of irradiated solar cells using variable threshold energy for atomic displacement
Progress in photovoltaics ; 25 , 9
2017
Article (Journal)
English
BKL: | 53.36 Energiedirektumwandler, elektrische Energiespeicher |
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