A quantum wire‐on‐well (WoW) structure, taking advantage of the layer undulation of an InGaAs/GaAs/GaAsP superlattice grown on a vicinal substrate, was demonstrated to enhance the carrier collection from the confinement levels and extend the carrier lifetime (220 ns) by approximately four times more than a planar reference superlattice. Strained InGaAs/GaAs/GaAsP superlattices were grown on GaAs substrates under exactly the same conditions except for the substrate misorientation (0 and 6 ° off). The growth on a 6 ° off substrate induced significant layer undulation as a result of step bunching and non‐uniform precursor incorporation between steps and terraces, whereas the growth on a substrate without miscut resulted in planar layers. The undulation was the most significant for InGaAs layers, forming periodically aligned InGaAs nanowires on planar wells, a WoW structure. As for the photocurrent corresponding to the sub‐bandgap range of GaAs, the light absorption by the WoW was extended to longer wavelengths and weakened as compared with the planar superlattice. Almost the same photocurrent was obtained for both the WoW and the planar superlattice. Open‐circuit voltage for the WoW was not affected by the longer‐wavelength absorption edge, and the same value was obtained for the two structures. Furthermore, the superior carrier collection in the WoW, especially under forward biases, improved fill factor compared with the planer superlattice. Copyright © 2016 John Wiley & Sons, Ltd. A quantum wire‐on‐well (WoW) structure, taking advantage of the layer undulation of an InGaAs/GaAs/GaAsP superlattice grown on a 6 °‐off substrate, enhances the carrier collection from the confinement levels and extend the carrier lifetime (220 ns) by approximately four times more than a planar reference superlattice. The superior carrier collection in the WoW improved fill factor compared with the planer superlattice.


    Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Quantum wire‐on‐well (WoW) cell with long carrier lifetime for efficient carrier transport



    Published in:

    Publication date :

    2016




    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English



    Classification :

    BKL:    53.36 Energiedirektumwandler, elektrische Energiespeicher



    Carrier transport effects in high-speed quantum-well lasers

    Nagarajan, Radhakrishnan / Ishikawa, Masayuki / Fukushima, Toru et al. | SPIE | 1992


    Carrier transport effects in quantum well lasers: an overview

    Nagarajan, R. | British Library Online Contents | 1994


    Carrier Lifetime Measurement of Long Wavelength GaInNAs Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998


    Carrier transport and injection efficiency of InGaAsN quantum-well lasers

    Jeng-Ya Yeh, / Mawst, L.J. / Tansu, N. | IEEE | 2004


    Carrier Transport and Injection Efficiency of InGaAsN Quantum-Well Lasers

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004