Copper thiocyanate (CuSCN) has proven to be a low‐cost, efficient hole‐transporting material for the emerging organic–inorganic perovskite solar cells. Herein, we report that CuSCN can also be applied to CdTe thin‐film solar cells to achieve high open‐circuit voltages ( V OC s). By optimizing the thickness of the thermally evaporated CuSCN films, CdTe cells fabricated by close space sublimation in the superstrate configuration have achieved V OC s as high as 872 mV, which is about 20–25 mV higher than the highest V OC for the reference cells using the standard Cu/Au back contacts. CuSCN is a wide bandgap p ‐type conductor with a conduction band higher than that of CdTe, leading to a conduction band offset that reflects electrons in CdTe, partially explaining the improved V OC s. However, due to the low conductivity of CuSCN, CdTe cells using CuSCN/Au back contacts exhibited slightly lower fill factors than the cells using Cu/Au back contacts. With optimized CdS:O window layers, the power conversion efficiency of the best CdTe cell, using CuSCN/Au back contact, is 14.7%: slightly lower than that of the best cell (15.2%) using Cu/Au back contact. Copyright © 2015 John Wiley & Sons, Ltd. In this paper, we report that CuSCN could be a good electron reflector for CdTe solar cells. We have found CdTe cells with CuSCN/Au back contacts can lead to V OC improvements by 20–25mV as compared with the cells using standard Cu/Au back contacts. With CuSCN buffer layer, our CdTe solar cells have demonstrated V OC s as high as 872 mV. We believe that the results reported herein suggest a new way to improve the performance of CdTe solar cells.


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    Title :

    Application of copper thiocyanate for high open‐circuit voltages of CdTe solar cells


    Contributors:

    Published in:

    Publication date :

    2016




    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English



    Classification :

    BKL:    53.36 Energiedirektumwandler, elektrische Energiespeicher