We report results obtained using an innovative approach for the fabrication of bifacial low‐concentrator thin Ag‐free n‐type Cz‐Si (Czochralski silicon) solar cells based on an indium tin oxide/(p + nn + )Cz‐Si/indium fluorine oxide structure. The (p + nn + )Cz‐Si structure was produced by boron and phosphorus diffusion from B‐ and P‐containing glasses deposited on the opposite sides of n‐type Cz‐Si wafers, followed by an etch‐back step. Transparent conducting oxide (TCO) films, acting as antireflection electrodes, were deposited by ultrasonic spray pyrolysis on both sides. A copper wire contact pattern was attached by low‐temperature (160°C) lamination simultaneously to the front and rear transparent conducting oxide layers as well as to the interconnecting ribbons located outside the structure. The shadowing from the contacts was ~4%. The resulting solar cells, 25 × 25 mm 2 in dimensions, showed front/rear efficiencies of 17.6–17.9%/16.7–17.0%, respectively, at one to three suns (bifaciality of ~95%). Even at one‐sun front illumination and 20–50% one‐sun rear illumination, such a cell will generate energy approaching that produced by a monofacial solar cell of 21–26% efficiency. Copyright © 2014 John Wiley & Sons, Ltd. Results obtained in frame of an innovative approach for fabrication of the bifacial low‐concentrator thin n‐type Ag‐free Czochralski silicon (Cz‐Si) solar cells based on indium tin oxide/(p + nn + )Cz‐Si/indium fluorine oxide structure with the contact pattern of copper wire are presented in this work. The resulting solar cells showed front/rear efficiencies of 17.6–17.9%/16.7–17.0% respectively at one to three suns (bifaciality of ~95%).
Bifacial concentrator Ag‐free crystalline n‐type Si solar cell
Progress in photovoltaics ; 23 , 5
2015
Article (Journal)
English
n‐type , concentrator , bifacial , crystalline Si , Ag free , solar cell
BKL: | 53.36 Energiedirektumwandler, elektrische Energiespeicher |
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