The carrier dynamics under solar excitation in the third generation AlAs‐Ga 0.27 In 0.73 As quantum well solar cell on an InP substrate is theoretically investigated. The quantum well shows a significantly higher carrier occupation compared with that of a pure bulk sample. Furthermore, the influence of carrier scattering via the interaction with a bath of longitudinal optical phonons stemming from the substrate is taken into account, showing strong intraband and interband relaxation of the carrier distribution toward the lowest subband states. Copyright © 2014 John Wiley & Sons, Ltd. The dynamics of carrier–phonon scattering under solar excitation in a AlAs‐Ga 0.27 In 0.73 As quantum well solar cell is theoretically investigated, showing strong intraband and interband relaxation of the carrier distribution toward the lowest subband states. The quantum well shows a significantly higher carrier occupation compared with that of a pure bulk sample.


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    Title :

    Light absorption and many‐particle electron–phonon interactions in intermediate band quantum well solar cells



    Published in:

    Publication date :

    2015




    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English



    Classification :

    BKL:    53.36 Energiedirektumwandler, elektrische Energiespeicher