The carrier dynamics under solar excitation in the third generation AlAs‐Ga 0.27 In 0.73 As quantum well solar cell on an InP substrate is theoretically investigated. The quantum well shows a significantly higher carrier occupation compared with that of a pure bulk sample. Furthermore, the influence of carrier scattering via the interaction with a bath of longitudinal optical phonons stemming from the substrate is taken into account, showing strong intraband and interband relaxation of the carrier distribution toward the lowest subband states. Copyright © 2014 John Wiley & Sons, Ltd. The dynamics of carrier–phonon scattering under solar excitation in a AlAs‐Ga 0.27 In 0.73 As quantum well solar cell is theoretically investigated, showing strong intraband and interband relaxation of the carrier distribution toward the lowest subband states. The quantum well shows a significantly higher carrier occupation compared with that of a pure bulk sample.
Light absorption and many‐particle electron–phonon interactions in intermediate band quantum well solar cells
Progress in photovoltaics ; 23 , 10
2015
Article (Journal)
English
BKL: | 53.36 Energiedirektumwandler, elektrische Energiespeicher |
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