Characteristics of p-CuInSe2-n-CdS heterojunction prepared by evaporation of Cu2Se and In2Se3
Solar energy materials & solar cells ; 35 , 1-4 ; 247-254
1995
Article (Journal)
English
Electrical properties of CuInSe2 films prepared by evaporation of Cu2Se and In2Se3 compounds
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|Use of n-type (Cu2Se)x(In2Se3)1-x ordered defect chalcopyrite films for solar cell absorber layers
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