Gas-sensing integrated circuits consisting largely of modified static random-access memories (SRAMs) undergoing development, building on experience gained in use of modified SRAMs as radiation sensors. Each SRAM memory cell includes flip-flop circuit; sensors exploit metastable state that lies between two stable states (corresponding to binary logic states) of flip-flop circuit. Voltages of metastable states vary with exposures of gas-sensitive resistors.


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    Title :

    Gas-Sensing Flip-Flop Circuits


    Contributors:

    Published in:

    Publication date :

    1995-09-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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