Vertical-Bloch-line memory is developmental very-large-scale integrated-circuit block-access magnetic memory. Stores data in form of localized pairs of twists (VBL pairs) in magnetic field at edge of ferromagnetic domain in each stripe. Presence or absence of VBL pair at bit position denotes one or zero, respectively. Offers advantages of resistance to ionizing radiation, potential areal storage density approximately less than 1 Gb/cm squared, data rates approximately less than 1 Gb/s, and average access times of order of milliseconds. Furthermore, mass, volume, and demand for power less than other magnetic and electronic memories.
Vertical-Bloch-Line Memory
NASA Tech Briefs ; 17 , 6
1993-06-01
Miscellaneous
No indication
English
Three-Dimensional Vertical-Bloch-Line Memory System
Online Contents | 1994
Three-Dimensional Vertical-Bloch-Line Memory System
NTRS | 1994
|Improved Reading Gate for Vertical-Bloch-Line Memory
Online Contents | 1994
Improved Reading Gate For Vertical-Bloch-Line Memory
NTRS | 1994
|Half-State Readout In Vertical-Bloch-Line Memory
NTRS | 1994
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