Vertical-Bloch-line memory is developmental very-large-scale integrated-circuit block-access magnetic memory. Stores data in form of localized pairs of twists (VBL pairs) in magnetic field at edge of ferromagnetic domain in each stripe. Presence or absence of VBL pair at bit position denotes one or zero, respectively. Offers advantages of resistance to ionizing radiation, potential areal storage density approximately less than 1 Gb/cm squared, data rates approximately less than 1 Gb/s, and average access times of order of milliseconds. Furthermore, mass, volume, and demand for power less than other magnetic and electronic memories.


    Access

    Access via TIB

    Check availability in my library


    Export, share and cite



    Title :

    Vertical-Bloch-Line Memory


    Contributors:

    Published in:

    Publication date :

    1993-06-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English





    Three-Dimensional Vertical-Bloch-Line Memory System

    Katti, Romney R. / Wu, Jiin-Chuan / Stadler, Henry L. | NTRS | 1994



    Improved Reading Gate For Vertical-Bloch-Line Memory

    Wu, Jiin-Chuan / Stadler, Henry L. / Katti, Romney R. | NTRS | 1994


    Half-State Readout In Vertical-Bloch-Line Memory

    Katti, Romney R. / Wu, Jiin-Chuan / Stadler, Henry L. | NTRS | 1994