In proposed magnet/Hall-effect random-access memory (MHRAM), bits of data stored magnetically in Perm-alloy (or equivalent)-film memory elements and read out by using Hall-effect sensors to detect magnetization. Value of each bit represented by polarity of magnetization. Retains data for indefinite time or until data rewritten. Speed of Hall-effect sensors in MHRAM results in readout times of about 100 nanoseconds. Other characteristics include high immunity to ionizing radiation and storage densities of order 10(Sup6)bits/cm(Sup 2) or more.
Magnet/Hall-Effect Random-Access Memory
NASA Tech Briefs ; 15 , 11
1991-11-01
Miscellaneous
No indication
English
NTRS | 1995
|Online Contents | 1995
Holographic random access memory
IEEE | 2000
|Holographic Random Access Memory
British Library Conference Proceedings | 2000
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