In proposed magnet/Hall-effect random-access memory (MHRAM), bits of data stored magnetically in Perm-alloy (or equivalent)-film memory elements and read out by using Hall-effect sensors to detect magnetization. Value of each bit represented by polarity of magnetization. Retains data for indefinite time or until data rewritten. Speed of Hall-effect sensors in MHRAM results in readout times of about 100 nanoseconds. Other characteristics include high immunity to ionizing radiation and storage densities of order 10(Sup6)bits/cm(Sup 2) or more.


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    Title :

    Magnet/Hall-Effect Random-Access Memory


    Contributors:

    Published in:

    Publication date :

    1991-11-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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