Driver circuit generates rapid-voltage-transition pulses needed to switch high-power metal oxide/semiconductor field-effect transistor (MOSFET) modules rapidly between full "on" and full "off". Rapid switching reduces time of overlap between appreciable current through and appreciable voltage across such modules, thereby increasing power efficiency.


    Access

    Access via TIB

    Check availability in my library


    Export, share and cite



    Title :

    Driver Circuit For High-Power MOSFET's


    Contributors:

    Published in:

    Publication date :

    1991-11-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English





    Automated System Tests High-Power MOSFET's

    Huston, Steven W. / Wendt, Isabel O. | NTRS | 1994


    MOSFET's for Cryogenic Amplifiers

    Dehaye, R. / Ventrice, C. A. | NTRS | 1987



    Calculating Second-Order Effects in MOSFET's

    Benumof, Reuben / Zoutendyk, John A. / Coss, James R. | NTRS | 1990