High-gain AlxGa1-xAs/GaAs npn double heterojunction bipolar transistors developed for use as phototransistors in optoelectronic integrated circuits, especially in artificial neural networks. Transistors perform both photodetection and saturating-amplification functions of neurons. Good candidates for such application because structurally compatible with laser diodes and light-emitting diodes, detect light, and provide high current gain needed to compensate for losses in holographic optical elements.
High-Gain AlxGa1-xAs/GaAs Transistors For Neural Networks
NASA Tech Briefs ; 15 , 9
1991-09-01
Miscellaneous
No indication
English
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