High-gain AlxGa1-xAs/GaAs npn double heterojunction bipolar transistors developed for use as phototransistors in optoelectronic integrated circuits, especially in artificial neural networks. Transistors perform both photodetection and saturating-amplification functions of neurons. Good candidates for such application because structurally compatible with laser diodes and light-emitting diodes, detect light, and provide high current gain needed to compensate for losses in holographic optical elements.


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    Title :

    High-Gain AlxGa1-xAs/GaAs Transistors For Neural Networks


    Contributors:

    Published in:

    Publication date :

    1991-09-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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