New low-temperature procedure used to deposit ohmic gold contacts on gallium arsenide epitaxial films, forming ohmic electrical contacts. Keeping wafer in vacuum until metallization prevents formation of rectifying contacts.


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    Title :

    Formation Of Ohmic Gold Contacts On Epitaxial GaAs


    Contributors:

    Published in:

    Publication date :

    1991-03-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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