The application of variable angle spectroscopic ellipsometry to the study of diffusion of atomic oxygen through SiO2 is presented. Data are found to be well fit to the universal growth parabola, and the diffusion coefficient is estimated to be 0.00001 sq cm/min.
Ellipsometric studies of the diffusion of automic oxygen through silicon dioxide thin films
AIAA Journal ; 28
1990-06-01
Miscellaneous
No indication
English
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