Neither external bias nor energy-storage components required. Three-terminal semiconductor switching circuit features high switching speed, extremely high turnoff safe operating area (area in current-vs-voltage plane), moderately low forward ("on"-state) voltage drop, and efficient utilization of silicon in design of components. Includes gate-turn-off thyristor (GTO) and low-voltage (low-on-resistance) field-effect transistor (FET-1) connected in series to form cascode pair. Made of commercially available, discrete components, as hybrid circuit package or as monolithic integrated circuit.


    Access

    Access via TIB

    Check availability in my library


    Export, share and cite



    Title :

    GTO/FET Cascode Three-Terminal Switch


    Contributors:

    Published in:

    Publication date :

    1990-07-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English





    Experimental investigation on a cascode-based three-phase inverter for AC drives

    Pellitteri, Filippo / Di Tommaso, Antonino Oscar / Miceli, Rosario et al. | IEEE | 2021


    AE 152 cascode readout for far-IR focal-plane arrays

    Young, Erick T. / Woolaway, James T. | SPIE | 1992


    The Potential of SiC Cascode JFETs in Electric Vehicle Traction Inverters

    Wu, Ruizhu / Gonzalez, Jose Ortiz / Davletzhanova, Zarina et al. | IEEE | 2019


    Cryogenic Temperature Characterizations of State-of-the-art Cascode 900 V GaN FET

    Wei, Yuqi / Hossain, Md Maksudul / Sweeting, Rosten et al. | IEEE | 2021