Proposed detector of photons of wavelengths in range of 30 to 200 micrometer made of alternating layers of lightly and heavily negatively doped germanium. Formed in sequence by conventional chemical-vapor deposition. Alternating-gradient structure enhances collection of photogenerated charge carriers while suppressing dark current, thus achieving high detectivity. Alternating layers of n+ and n- germanium provides high detectivity in far-infrared spectral region. Also possible to make similar structures with positive doping and with other semiconductors as silicon or gallium arsenide to obtain various spectral response.


    Access

    Access via TIB

    Check availability in my library


    Export, share and cite



    Title :

    Alternating-Gradient Photodetector For Far Infrared


    Contributors:

    Published in:

    Publication date :

    1989-11-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




    A Sensitive Infrared Photodetector

    Srivastava, S. K. / Maleki, L. | NTRS | 1985


    A Four-Color Quantum Well Infrared Photodetector

    Tidrow, M. Z. / Jiang, X. D. / Li, S. S. et al. | British Library Conference Proceedings | 1999


    Two photon absorption in quantum dot infrared photodetector

    Wu, Z.K. / Choi, H. / Norris, T.B. et al. | IEEE | 2003


    Optical fiber medical pyrometer with infrared photodetector [5124-12]

    Drzazgowski, J. / Nowak, Z. / Paliwoda, R. et al. | British Library Conference Proceedings | 2003


    Photonic jets for strained-layer superlattice infrared photodetector enhancement

    Allen, Kenneth W. / Duran, Joshua M. / Ariyawansa, Gamini et al. | IEEE | 2014