Proposed detector of photons of wavelengths in range of 30 to 200 micrometer made of alternating layers of lightly and heavily negatively doped germanium. Formed in sequence by conventional chemical-vapor deposition. Alternating-gradient structure enhances collection of photogenerated charge carriers while suppressing dark current, thus achieving high detectivity. Alternating layers of n+ and n- germanium provides high detectivity in far-infrared spectral region. Also possible to make similar structures with positive doping and with other semiconductors as silicon or gallium arsenide to obtain various spectral response.
Alternating-Gradient Photodetector For Far Infrared
NASA Tech Briefs ; 13 , 11
1989-11-01
Miscellaneous
No indication
English
A Sensitive Infrared Photodetector
NTRS | 1985
|A Four-Color Quantum Well Infrared Photodetector
British Library Conference Proceedings | 1999
|Optical fiber medical pyrometer with infrared photodetector [5124-12]
British Library Conference Proceedings | 2003
|