Parasitic losses reduced with lightly doped epitaxial layers of proper thickness. Report presents calculations of conversion losses in Schottky-barrier diodes. Theoretical work directed toward reduction of parasitic losses through proper design of space-charge layers; possible, to reduce barrier capacitances and contributions to barrier resistances from undepleted epitaxial layers.
Conversion Losses In GaAs Schottky-Barrier Diodes
NASA Tech Briefs ; 12 , 11
1988-12-01
Miscellaneous
No indication
English
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