Parasitic losses reduced with lightly doped epitaxial layers of proper thickness. Report presents calculations of conversion losses in Schottky-barrier diodes. Theoretical work directed toward reduction of parasitic losses through proper design of space-charge layers; possible, to reduce barrier capacitances and contributions to barrier resistances from undepleted epitaxial layers.


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    Title :

    Conversion Losses In GaAs Schottky-Barrier Diodes


    Contributors:

    Published in:

    Publication date :

    1988-12-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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