Method of growing silicon on sapphire substrate uses beam of electrons to aid growth of semiconductor material. Silicon forms as epitaxial film in precisely localized areas in micron-wide lines. Promising fabrication method for fast, densely-packed integrated circuits. Silicon deposited preferentially in contaminated substrate zones and in clean zone irradiated by electron beam. Electron beam, like surface contamination, appears to stimulate decomposition of silane atmosphere.


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    Title :

    Electron Beam "Writes" Silicon On Sapphire


    Contributors:

    Published in:

    Publication date :

    1988-02-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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