Report presents latest in series of investigations of "soft" bit errors known as single-event upsets (SEU). In this investigation, SEU response of low-power, Schottky-diode-clamped, transistor/transistor-logic (TTL) static random-access memory (RAM) observed during irradiation by Br and O ions in ranges of 100 to 240 and 20 to 100 MeV, respectively. Experimental data complete verification of computer model used to simulate SEU in this circuit.


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    Title :

    Studies Of Single-Event-Upset Models


    Contributors:

    Published in:

    Publication date :

    1988-02-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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