Proposed improvement for silicon crystal growing enables rapid heating of melt in vicinity of liquid-solid interface to compensate for decreases in melt temperature, to ensure uniform diameter and composition in ingot. Intended for growing large silicon ingots by Czochralski process, cylindrical single-crystal ingot pulled from molten silicon. Heating confined to small mass near growing crystal.


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    Title :

    Fast-Response Heating of Silicon Melts


    Contributors:

    Published in:

    Publication date :

    1987-01-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English





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