System for controlled injection of electrons or holes into oxide layer of MOS capacitor can be used to measure oxide trapping parameters. Since trapping mechanisms can cause degradation and ultimate failure of MOS elements exposed to ionizing radiation, system can be helpful in predicting device tolerance.
Measuring oxide trapping parameters in MOS structure
NASA Tech Briefs ; 3 , 1
1978-06-01
Miscellaneous
No indication
English
Flux-trapping characteristics of oxide superconducting bulks in array
Tema Archive | 1999
|SAE Technical Papers | 1971
|British Library Online Contents | 2016
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