System for controlled injection of electrons or holes into oxide layer of MOS capacitor can be used to measure oxide trapping parameters. Since trapping mechanisms can cause degradation and ultimate failure of MOS elements exposed to ionizing radiation, system can be helpful in predicting device tolerance.


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    Title :

    Measuring oxide trapping parameters in MOS structure


    Contributors:

    Published in:

    Publication date :

    1978-06-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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