Depth and planarity of zinc diffused junctions in GaP using temperature, phosphorus overpressure and time as independent variables
Zinc diffusion into gallium phosphide under high and low phosphorus overpressure.
1969-05-01
Miscellaneous
No indication
English
Development of high temperature gallium phosphide rectifiers
TIBKAT | 1972
|Gallium arsenide phosphide injection laser diodes
TIBKAT | 1967
|Design and fabrication of gallium phosphide rectifiers
TIBKAT | 1970
|Overpressure valve for regulated discharge of overpressure of gas
European Patent Office | 2025
|