Electro-optic coefficient of gallium arsenide measured at wavelengths from 2 to 12 microns by 10.6 micron laser modulator
Development of a 10.6-micron laser modulator
1967-06-07
Miscellaneous
No indication
English
Development of a 10.6-Micron Laser Modulator
NTIS | 1967
|Development of a 10.6-micron laser modulator
TIBKAT | 1967
|Development of the 10.6-micron laser
NTRS | 1966
|Micron 10.6 laser stabilization
NTRS | 1970
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