130 mW CW singlemode operation of an InGaAsP/InP strained multiquantum well DFB laser at 1.3 µm is reported. The laser showed low threshold current, high quantum efficiency and very good linearity.
High power operation of multiquantum well DFB lasers at 1.3 µm
1995-08-03
2 pages
Article (Journal)
English
gallium arsenide , quantum well lasers , distributed feedback lasers , threshold current , InGaAsP-InP , linearity , 1.3 micrometre , quantum efficiency , III-V semiconductors , CW singlemode operation , strained multiquantum well , indium compounds , multiquantum well DFB lasers , InGaAsP/InP , 130 mW
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