An InP-based monolithically integrated optoelectronic integrated circuit (OEIC), consisting of a 1.55 µm photoreceiver and a laser driver, is demonstrated. The circuit, designed and fabricated with heterojunction bipolar transistors, has a −3 dB bandwidth of 8.1 GHz and bit-error-rate measurements show that the circuit can operate at 10 Gbit/s. The OEIC is tested with a singlemode 1.55 µm laser connected externally.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Monolithically integrated 1.55 µm photoreceiver-laser driver optoelectronic integrated circuit


    Contributors:
    Pradhan, S. (author) / Bhattacharya, P. (author) / Liu, W.K. (author)

    Publication date :

    2002-08-15


    Size :

    3 pages



    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English




    Investigation of Adjacent Channel Crosstalk in Multichannel Monolithically Integrated 1.55 m Photoreceiver Arrays

    Syao, K.-C. / Yang, K. / Zhang, X. et al. | British Library Online Contents | 1997


    Monolithically integrated silicon NMOS-PIN photoreceiver [2400-38]

    Garrett, L. D. / Qi, J. M. / Schow, C. L. et al. | British Library Conference Proceedings | 1995




    15-Gbit/s High-Speed Monolithically Integrated pin-HEMT Photoreceiver

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993