An InP-based monolithically integrated optoelectronic integrated circuit (OEIC), consisting of a 1.55 µm photoreceiver and a laser driver, is demonstrated. The circuit, designed and fabricated with heterojunction bipolar transistors, has a −3 dB bandwidth of 8.1 GHz and bit-error-rate measurements show that the circuit can operate at 10 Gbit/s. The OEIC is tested with a singlemode 1.55 µm laser connected externally.
Monolithically integrated 1.55 µm photoreceiver-laser driver optoelectronic integrated circuit
2002-08-15
3 pages
Article (Journal)
English
InP , transimpedance amplifier , integrated optoelectronics , optical receivers , HBT circuit , III-V semiconductors , front-end photoreceiver , bipolar integrated circuits , frequency response , single-mode laser , indium compounds , 1.55 micron , 10 Gbit/s , 8.1 GHz , monolithically integrated OEIC , high-speed WDM phototransceivers , driver circuits , photoreceiver-laser driver OEIC
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