Summary form only given. GaAs/InP wafer fusion is a key technology in fabricating vertical-cavity lasers (VCLs) with long emission wavelength (1.3 /spl mu/m and 1.55 /spl mu/m). The fusion joins highly reflective AlGaAs/GaAs distributed Bragg reflectors (DBRs) with InGaAsP/InP active regions. Fused VCLs show the best performance of any long-wavelength VCL with electrically pumped continuous-wave operation up to 71/spl deg/C (1.55 /spl mu/m). However, a number of questions remains concerning the nature of the fused junction, and its effect on performance and long-term reliability of the laser. In particular, the current-voltage (I-V) and light-current (L-I) curves often show abrupt self-switching. We present the first detailed analysis and physical explanation of this switching phenomenon.


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    Title :

    Abrupt self-switching in fused GaAs/InP vertical-cavity lasers


    Contributors:
    Piprek, J. (author) / Black, A. (author) / Abraham, P. (author) / Hu, E.L. (author) / Bowers, J.E. (author)


    Publication date :

    1999-01-01


    Size :

    281758 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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