Summary form only given. GaAs/InP wafer fusion is a key technology in fabricating vertical-cavity lasers (VCLs) with long emission wavelength (1.3 /spl mu/m and 1.55 /spl mu/m). The fusion joins highly reflective AlGaAs/GaAs distributed Bragg reflectors (DBRs) with InGaAsP/InP active regions. Fused VCLs show the best performance of any long-wavelength VCL with electrically pumped continuous-wave operation up to 71/spl deg/C (1.55 /spl mu/m). However, a number of questions remains concerning the nature of the fused junction, and its effect on performance and long-term reliability of the laser. In particular, the current-voltage (I-V) and light-current (L-I) curves often show abrupt self-switching. We present the first detailed analysis and physical explanation of this switching phenomenon.
Abrupt self-switching in fused GaAs/InP vertical-cavity lasers
1999-01-01
281758 byte
Conference paper
Electronic Resource
English
Wafer fused long wavelength vertical cavity lasers
IEEE | 1993
|Wafer Fused Long Wave-length Vertical Cavity Lasers
British Library Conference Proceedings | 1993
|Fabrication and characteristics of double-fused vertical-cavity lasers
British Library Online Contents | 1996
|Cryogenic Performance of Double-Fused 1.5-m Vertical Cavity Lasers
British Library Online Contents | 1999
|Vertical-cavity surface-emitting lasers grown on GaAs
IEEE | 1997
|