InGaAs/InP double heterojunction bipolar transistor with low offset voltage and low collector current blocking effect have been obtained using a combination of InGaAs spacers at the BE and BC junctions, and a highly doped n-type InP layer in the collector region. It is found that increasing the doping concentration of the n/sup +/-InP layer is more effective in lowering current blocking effect than increasing the InGaAs BC spacer thickness. Increasing base doping concentration is shown to be effective as well.


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    Title :

    InGaAs/InP heterojunction bipolar transistors with low offset voltage and current blocking


    Contributors:


    Publication date :

    2003-01-01


    Size :

    60741 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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