We have demonstrated that independent control of three band-gaps across an InP-InGaAs-InGaAsP QW wafer can be achieved by a two-stage sputtered silica intermixing processes. This will be used for optimisation of the performance of optical switches which consist of passive components, modulators and amplifiers.


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    Title :

    Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch


    Contributors:
    Qian, Y.H. (author) / Owen, M. (author) / Ke, M.L. (author) / Qiu, B.C. (author) / McDougall, S.D. (author) / Kowalski, O.P. (author) / Hamilton, C.J. (author) / Bryce, A.C. (author) / Marsh, J.H. (author) / Wilkinson, C.D.W. (author)


    Publication date :

    1998-01-01


    Size :

    185584 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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