We have demonstrated that independent control of three band-gaps across an InP-InGaAs-InGaAsP QW wafer can be achieved by a two-stage sputtered silica intermixing processes. This will be used for optimisation of the performance of optical switches which consist of passive components, modulators and amplifiers.
Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch
1998-01-01
185584 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1998
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