In this paper, we report a new approach to a GaAs-AlGaAs TE/TM beam splitter which permits operation in the III-V materials system. Since III-V semiconductors do not show intrinsic material birefringence, our device is based on the birefringence induced by the electro-optical effect. Specifically, the device utilizes the large difference in propagation constants of the first-higher-order TE mode (TE/sub 01/) and the fundamental TM mode (TM/sub 00/) in the mode-sorting Y-branch.
Electronically tunable Mach-Zehnder polarization splitter
1996-01-01
206616 byte
Conference paper
Electronic Resource
English
Electronically Tunable Mach-Zehnder Polarization Splitter
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