We model the spin polarized optoelectronic processes in a GaAs-based light emitting diode under injection of spin-filtered electrons. To describe the microscopic dynamics we derive the quantum Langevin equations for photon number and carrier numbers. The polarization degree of the light generated by light emitting diode is calculated and compared with the experiment results.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Modelling spin polarized optoelectronic processes


    Contributors:


    Publication date :

    2002-01-01


    Size :

    179712 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Modelling Spin Polarized Optoelectronic Processes

    Sun, H. B. / de Oliveira, M. C. / IEEE | British Library Conference Proceedings | 2002


    Spin polarized quantum dot light emitters

    Bhattacharya, P. / Ghosh, S. | IEEE | 2002


    MC1 Spin Polarized Quantum Dot Light Emitters

    IEEE | British Library Conference Proceedings | 2002


    Spin-Polarized Scanning Tunneling Microscopy and its Family

    Mukasa, K. / Sueoka, K. / Hasegawa, H. et al. | British Library Online Contents | 1995


    Optoelectronic Devices in Optoelectronic Signal Processors

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997