We model the spin polarized optoelectronic processes in a GaAs-based light emitting diode under injection of spin-filtered electrons. To describe the microscopic dynamics we derive the quantum Langevin equations for photon number and carrier numbers. The polarization degree of the light generated by light emitting diode is calculated and compared with the experiment results.
Modelling spin polarized optoelectronic processes
2002-01-01
179712 byte
Conference paper
Electronic Resource
English
Modelling Spin Polarized Optoelectronic Processes
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